sep.1998 description: mitsubishi intelligent power mod- ules are isolated base modules de- signed for power switching applica- tions operating at frequencies to 20khz. built-in control circuits pro- vide optimum gate drive and pro- tection for the igbt and free-wheel diode power devices. features: u complete output power circuit u gate drive circuit u protection logic C short circuit C over current C over temperature C under voltage applications: u inverters u ups u motion/servo control u power supplies ordering information: example: select the complete part number from the table below -i.e. pm150csa060 is a 600v, 150 ampere intelligent power mod- ule. type current rating v ces amperes volts (x 10) pm 150 60 dimensions inches millimeters a 4.33 0.04 110.0 1.0 b 3.74 0.02 95.0 0.5 c 3.50 0.04 89.0 1.0 d 3.27 83.0 e 2.91 0.02 74.0 0.5 f 2.44 62.0 g 1.28 32.6 h 1.24 31.6 j 1.02 26.0 k 0.94 24.0 l 0.87 +0.06/-0 22.0 +1.5/-0.0 m 0.79 20.0 n 0.76 19.4 p 0.75 19.0 q 0.708 17.98 r 0.670 17.02 dimensions inches millimeters s 0.67 17.0 t 0.52 13.2 u 0.39 10.0 v 0.27 7.0 w 0.30 7.5 x 0.24 6.0 y 0.24 rad. rad. 6.0 z 0.22 dia. dia. 5.5 aa metric m5 m5 ab 0.127 3.22 ac 0.10 2.6 ad 0.08 2.0 ae 0.07 1.8 af 0.06 1.6 ag 0.02 0.01 0.5 0.3 mitsubishi intelligent power modules pm150csa060 flat-base type insulated package outline drawing and circuit diagram t ac 1. 2. 3. 4. 5. 6. 7. 8. 9. v v v v v v v 10. 11. 12. 13. 14. 15. 16. u u vv w w wpc upi vpi wpi nc ni p n p p n n upc f o v vpc 17. 18. 19. nc wf o o vf o uf b s m m ad ag ag k j j e u u u ab q ab r f a u d x p x w w c 78 9 10 11 13 15 1234 56 n v w u bp aa - thd (6 typ.) z - dia. (4 typ.) ad (15 typ.) 12 14 16 18 17 19 y (4 typ.) n ae g h l af v 2.54 mm dia. (2 typ.) (19 typ.) 0.5 mm sq. pin v v cc s i gnd gnd out upi v u fo up upc f o in v cc s i gnd gnd out f o in v cc s i gnd gnd out f o in v v fo v v fo vpi v vp vpc wpi w wp wpc v cc s i gnd gnd out f o in v cc s i gnd gnd out f o in u n v cc s i gnd gnd out f o in v v w n v ni n nc temp nc f o p u v w n nc
sep.1998 absolute maximum ratings, t j = 25 c unless otherwise specified ratings symbol pm150csa060 units power device junction temperature t j -20 to 150 c storage temperature t stg -40 to 125 c case operating temperature t c -20 to 100 c mounting torque, m5 mounting screws 1.47 ~ 1.96 n m mounting torque, m5 main terminal screws 1.47 ~ 1.96 n m module weight (typical) 550 grams supply voltage protected by oc and sc-(v d = 13.5 - 16.5v, inverter part) v cc(prot.) 400 volts isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms control sector supply voltage (applied between v up1 -v upc , v vp1 -v vpc , v wp1 -v wpc , v n1 -v nc )v d 20 volts input voltage (applied between u p -v upc , v p -v vpc , w p -v wpc , u n v n w n -v nc )v cin 20 volts fault output supply voltage (applied between u fo -v upc , v fo -v vpc , w fo -v wpc , f o -v nc ) v fo 20 volts fault output current (sink current of u fo , v fo , w fo and f o terminal) i fo 20 ma igbt inverter sector collector-emitter voltage (v d = 15v, v cin = 15v) v ces 600 volts collector current, (t c = 25 c) i c 150 amperes peak collector current, (t c = 25 c) i cp 300 amperes supply voltage (applied between p - n) v cc 450 volts supply voltage, surge (applied between p - n) v cc(surge) 500 volts collector dissipation p c 500 watts mitsubishi intelligent power modules pm150csa060 flat-base type insulated package
sep.1998 electrical and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units control sector over current trip level inverter part oc -20 c t 125 c, v d = 15v 210 300 amperes short circuit trip level inverter part sc -20 c t 125 c, v d = 15v 420 amperes over current delay time t off(oc) v d = 15v 10 m s over temperature protection ot trip level 111 118 125 c ot r reset level 100 c supply circuit under voltage protection uv trip level 11.5 12.0 12.5 volts uv r reset level 12.5 volts supply voltage v d applied between v up1 -v upc , 13.5 15 16.5 volts v vp1 -v vpc , v wp1 -v wpc , v n1 -v nc circuit current i d v d = 15v, v cin = 15v, v n1 -v nc 4055ma v d = 15v, v cin = 15v, v xp1 -v xpc 1318ma input on threshold voltage v th(on) applied between 1.2 1.5 1.8 volts input off threshold voltage v th(off) u p -v upc , v p -v vpc , w p -v wpc , 1.7 2.0 2.3 volts u n v n w n -v nc pwm input frequency f pwm 3- f sinusoidal 15 20 khz fault output current i fo(h) v d = 15v, v fo = 15v 0.01 ma i fo(l) v d = 15v, v fo = 15v 10 15 ma minimum fault output pulse width t fo v d = 15v 1.0 1.8 ms mitsubishi intelligent power modules pm150csa060 flat-base type insulated package
sep.1998 electrical and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units igbt inverter sector collector cutoff current i ces v ce = v ces , t j = 25 c 1.0 ma v ce = v ces , t j = 125 c10ma diode forward voltage v ec -i c = 150a, v d = 15v, v cin = 15v 2.2 3.3 volts collector-emitter saturation voltage v ce(sat) v d = 15v, v cin = 0v, i c = 150a 1.8 2.7 volts v d = 15v, v cin = 0v, i c = 150a, 1.75 2.63 volts t j = 125 c inductive load switching times t on 0.4 0.8 2.0 m s t rr v d = 15v, v cin = 0 ? 15v 0.15 0.3 m s t c(on) v cc = 300v, i c = 150a 0.4 1.0 m s t off t j = 125 c 2.0 2.9 m s t c(off) 0.6 1.2 m s thermal characteristics characteristic symbol condition min. typ. max. units junction to case thermal resistance r th(j-c)q each igbt 0.25 c/watt r th(j-c)f each fwdi 0.47 c/watt contact thermal resistance r th(c-f) case to fin per module, 0.027 c/watt thermal grease applied recommended conditions for use characteristic symbol condition value units supply voltage v cc applied across p-n terminals 0 ~ 400 volts v d applied between v up1 -v upc , 15 1.5 volts v n1 -v nc , v vp1 -v vpc , v wp1 -v wpc input on voltage v cin(on) applied between 0 ~ 0.8 volts input off voltage v cin(off) u p -v upc , v p -v vpc , w p -v wpc , 4.0 ~ v d volts u n v n w n -v nc pwm input frequency f pwm using application circuit 5 ~ 20 khz minimum dead time t dead input signal 3 2.5 m s mitsubishi intelligent power modules pm150csa060 flat-base type insulated package
sep.1998 0 .5 1.0 1.5 2.0 2.5 0 0 100 150 200 3.0 50 saturation voltage characteristics (typical) collector current, i c , (amperes) saturation voltage v ce(sat) , (volts) v d = 15v t j = 25 o c t j = 125 o c v cin = 0v 12 14 16 18 20 i c = 150a t j = 25 o c t j = 125 o c v cin = 0v 0 .5 1.0 1.5 2.0 2.5 collector-emitter saturation voltage characteristics (typical) supply voltage, v d , (volts) collector-emitter saturation voltage v ce(sat) , (volts) 3.0 012 0 output characteristics (typical) collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) 3 50 100 150 t j = 25 o c v cin = 0v v d = 17v 13 15 10 1 10 2 10 3 10 -1 collector current, i c , (amperes) switching times, t on , t off , ( m s) switching time vs. collector current (typical) t on 10 0 10 1 t off v cc = 300v v d = 15v inductive load t j = 25 o c t j = 125 o c 10 1 10 2 10 3 10 -1 collector current, i c , (amperes) switching times, t c(on) , t c(off) , ( m s) switching time vs. collector current (typical) t c(on) 10 0 10 1 t c(off) v cc = 300v v d = 15v inductive load t j = 25 o c t j = 125 o c 10 1 10 2 10 3 10 -2 collector reverse current, ? c , (amperes) reverse recovery time, t rr , ( m s) reverse recovery current, i rr , (amperes) reverse recovery current vs. collector current (typical) 10 -1 10 0 10 0 10 1 10 2 v cc = 300v v d = 15v inductive load t j = 25 o c t j = 125 o c i rr t rr 0 diode forward characteristics emitter-collector voltage, v ec , (volts) collector reverse current, ? c , (amperes) 0 0.5 1.0 10 1 10 2 10 3 1.5 2.0 v d = 15v v cin = 15v t j = 25 o c t j = 125 o c 2.5 60 80 100 120 140 over current trip level vs. supply voltage (typical) supply voltage, v d , (volts) over current trip level % (normalized) 12 14 16 18 20 t j = 25 o c 0 0 60 80 100 120 140 over current trip level vs. temperature (typical) junction temperature, t j , ( o c) over current trip level % (normalized) -50 0 50 100 150 v d = 15v 0 mitsubishi intelligent power modules pm150csa060 flat-base type insulated package
sep.1998 60 0 80 100 120 140 fault output pulse width vs. temperature (typical) junction temperature, t j , ( o c) fault output pulse width % (normalized) -50 0 50 100 150 v d = 15v 11 0 12 13 14 15 control supply voltage trip-reset level temperature dependency (typical) junction temperature, t j , ( o c) uv trip-reset level, uv t , uv r , (volts) -50 150 050 100 uv t uv r time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each igbt) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 single pulse standard value = r th(j-c)q = 0.25 o c/w 10 -2 10 -3 time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each fwdi) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 single pulse standard value = r th(j-c)f = 0.47 o c/w 10 -2 10 -3 mitsubishi intelligent power modules pm150csa060 flat-base type insulated package
|
